Selective Growth of WSe2 with Graphene Contacts

  • Yu Ting Lin (???dataset.roles.dataset.creator???)
  • Xin Quan Zhang (???dataset.roles.dataset.creator???)
  • Po Han Chen (貢獻者)
  • Chong Chi Chi (貢獻者)
  • Erh Chen Lin (???dataset.roles.dataset.creator???)
  • Jian Guo Rong (???dataset.roles.dataset.creator???)
  • Chuenhou Ouyang (貢獻者)
  • Yung-Fu Chen (貢獻者)
  • Yi Hsien Lee (貢獻者)
  • Lee Yi-Hsien (貢獻者)



Abstract Nanoelectronics of two-dimensional (2D) materials and related applications are hindered with critical contact issues with the semiconducting monolayers. To solve these issues, a fundamental challenge is selective and controllable fabrication of p-type or ambipolar transistors with a low Schottky barrier. Most p-type transistors are demonstrated with tungsten selenides (WSe2) but a high growth temperature is required. Here, we utilize seeding promoter and low pressure CVD process to enhance sequential WSe2 growth with a reduced growth temperature of 800 °C for reduced compositional fluctuations and high hetero-interface quality. Growth behavior of the sequential WSe2 growth at the edge of patterned graphene is discussed. With optimized growth conditions, high-quality interface of the laterally stitched WSe2-graphene is achieved and characterized with transmission electron microscopy (TEM). Device fabrication and electronic performances of the laterally stitched WSe2-graphene are presented.