Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

Jen Hsiung Liao; Hsiao Wei Huang; Lung Chieh Cheng; Hsueh Hsing Liu; Jen Inn Chyi; Dong Po Cai; Chii Chang Chen; Kun Yu Lai

doi:10.1016/j.solmat.2014.10.008

Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

Jen Hsiung Liao, Hsiao Wei Huang, Lung Chieh Cheng, Hsueh Hsing Liu, Jen Inn Chyi, Dong Po Cai, Chii Chang Chen, Kun Yu Lai

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5 G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×10¹⁸ cm^-3, the short-circuit current density (J_sc) under illumination by the green laser is noticeably reduced, whereas the J_sc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells.

Original language	English
Pages (from-to)	544-548
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	132
DOIs	https://doi.org/10.1016/j.solmat.2014.10.008
State	Published - Jan 2015

Keywords

GaN
Intermediate band solar cells
Yellow luminescence

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2014.10.008

Cite this

@article{eb5c1b9a2f6644c099c77d7c6c7426aa,

title = "Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells",

abstract = "The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5 G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018 cm-3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells.",

keywords = "GaN, Intermediate band solar cells, Yellow luminescence",

author = "Liao, {Jen Hsiung} and Huang, {Hsiao Wei} and Cheng, {Lung Chieh} and Liu, {Hsueh Hsing} and Chyi, {Jen Inn} and Cai, {Dong Po} and Chen, {Chii Chang} and Lai, {Kun Yu}",

year = "2015",

month = jan,

doi = "10.1016/j.solmat.2014.10.008",

language = "???core.languages.en_GB???",

volume = "132",

pages = "544--548",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

}

TY - JOUR

T1 - Yellow-emitting Si-doped GaN

T2 - Favorable characteristics for intermediate band solar cells

AU - Liao, Jen Hsiung

AU - Huang, Hsiao Wei

AU - Cheng, Lung Chieh

AU - Liu, Hsueh Hsing

AU - Chyi, Jen Inn

AU - Cai, Dong Po

AU - Chen, Chii Chang

AU - Lai, Kun Yu

PY - 2015/1

Y1 - 2015/1

N2 - The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5 G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018 cm-3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells.

AB - The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5 G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018 cm-3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells.

KW - GaN

KW - Intermediate band solar cells

KW - Yellow luminescence

UR - http://www.scopus.com/inward/record.url?scp=84908537516&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2014.10.008

DO - 10.1016/j.solmat.2014.10.008

M3 - 期刊論文

AN - SCOPUS:84908537516

SN - 0927-0248

VL - 132

SP - 544

EP - 548

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

ER -

Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

Abstract

Keywords

UN SDGs

Access to Document

Fingerprint

Cite this