Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

Jen Hsiung Liao, Hsiao Wei Huang, Lung Chieh Cheng, Hsueh Hsing Liu, Jen Inn Chyi, Dong Po Cai, Chii Chang Chen, Kun Yu Lai

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


The photovoltaic performance of a GaN p-n-n homojunction is characterized using the air-mass (AM) 1.5 G solar spectrum and a 532-nm green laser. The n-type active region is doped with Si in order to create an intermediate band for sub-bandgap photon absorption. When the doping level in the active region increases from 0 (unintentionally doped) to n=1×1018 cm-3, the short-circuit current density (Jsc) under illumination by the green laser is noticeably reduced, whereas the Jsc under AM1.5G is significantly enhanced by 90%. The results indicate that the Si-induced intermediate band is partially filled, a key feature favored by intermediate band solar cells.

Original languageEnglish
Pages (from-to)544-548
Number of pages5
JournalSolar Energy Materials and Solar Cells
StatePublished - Jan 2015


  • GaN
  • Intermediate band solar cells
  • Yellow luminescence


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