X-ray scattering studies on InGaAs quantum dots

C. H. Hsu; H. Y. Lee; Y. W. Hsieh; Y. P. Stetsko; M. T. Tang; K. S. Liang; N. T. Yeh; J. I. Chyi; D. Y. Noh

doi:10.1016/S0921-4526(03)00276-X

X-ray scattering studies on InGaAs quantum dots

C. H. Hsu
, H. Y. Lee
, Y. W. Hsieh
, Y. P. Stetsko
, M. T. Tang
, K. S. Liang
, N. T. Yeh
, J. I. Chyi
, D. Y. Noh

Research output: Contribution to journal › Conference article › peer-review

11 Scopus citations

Abstract

We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(001) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law.

Original language	English
Pages (from-to)	98-102
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	336
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-4526(03)00276-X
State	Published - Aug 2003
Event	Proceedings of the 7th SXNS - Lake Tahoe, CA, United States Duration: 23 Sep 2002 → 27 Sep 2002

Keywords

Quantum dots
X-ray scattering

Access to Document

10.1016/S0921-4526(03)00276-X

Cite this

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title = "X-ray scattering studies on InGaAs quantum dots",

abstract = "We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(001) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50\% near the dot/substrate interface and exceeded 50\% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law.",

keywords = "Quantum dots, X-ray scattering",

author = "Hsu, \{C. H.\} and Lee, \{H. Y.\} and Hsieh, \{Y. W.\} and Stetsko, \{Y. P.\} and Tang, \{M. T.\} and Liang, \{K. S.\} and Yeh, \{N. T.\} and Chyi, \{J. I.\} and Noh, \{D. Y.\}",

note = "Funding Information: The work at SRRC was partially supported by the National Science Council of Republic of China under Contract No. NSC 91-2112-M-213-008. The work at NCU was supported by the National Science Council of Republic of China under Contract No. NSC 90-2215-E-008-037, and the Ministry of Education of Republic of China under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4.; Proceedings of the 7th SXNS ; Conference date: 23-09-2002 Through 27-09-2002",

year = "2003",

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volume = "336",

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TY - JOUR

T1 - X-ray scattering studies on InGaAs quantum dots

AU - Hsu, C. H.

AU - Lee, H. Y.

AU - Hsieh, Y. W.

AU - Stetsko, Y. P.

AU - Tang, M. T.

AU - Liang, K. S.

AU - Yeh, N. T.

AU - Chyi, J. I.

AU - Noh, D. Y.

N1 - Funding Information: The work at SRRC was partially supported by the National Science Council of Republic of China under Contract No. NSC 91-2112-M-213-008. The work at NCU was supported by the National Science Council of Republic of China under Contract No. NSC 90-2215-E-008-037, and the Ministry of Education of Republic of China under the Program for Promoting Academic Excellence of Universities, 89-E-FA06-1-4.

PY - 2003/8

Y1 - 2003/8

N2 - We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(001) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law.

AB - We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(001) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law.

KW - Quantum dots

KW - X-ray scattering

UR - https://www.scopus.com/pages/publications/0037668969

U2 - 10.1016/S0921-4526(03)00276-X

DO - 10.1016/S0921-4526(03)00276-X

M3 - 會議論文

AN - SCOPUS:0037668969

SN - 0921-4526

VL - 336

SP - 98

EP - 102

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-2

T2 - Proceedings of the 7th SXNS

Y2 - 23 September 2002 through 27 September 2002

ER -

X-ray scattering studies on InGaAs quantum dots

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Keywords

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