Abstract
We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(001) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law.
Original language | English |
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Pages (from-to) | 98-102 |
Number of pages | 5 |
Journal | Physica B: Condensed Matter |
Volume | 336 |
Issue number | 1-2 |
DOIs | |
State | Published - Aug 2003 |
Event | Proceedings of the 7th SXNS - Lake Tahoe, CA, United States Duration: 23 Sep 2002 → 27 Sep 2002 |
Keywords
- Quantum dots
- X-ray scattering