X-ray scattering studies on InGaAs quantum dots

C. H. Hsu, H. Y. Lee, Y. W. Hsieh, Y. P. Stetsko, M. T. Tang, K. S. Liang, N. T. Yeh, J. I. Chyi, D. Y. Noh

Research output: Contribution to journalConference articlepeer-review

11 Scopus citations


We present a structural investigation of self-assembled InGaAs quantum dots on GaAs(001) substrates grown by molecular-beam epitaxy. The grazing incidence X-ray scattering measurements were performed at BL17B of Taiwan Light Source and BL12B2 of SPring-8. The strain field, composition distribution, and shape of the dots are determined. We found that In concentration was less than the nominal composition, 50% near the dot/substrate interface and exceeded 50% near the top of the dots, indicating In surface segregation. In addition, the relation between the strain and the composition did not obey Vegard's law.

Original languageEnglish
Pages (from-to)98-102
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1-2
StatePublished - Aug 2003
EventProceedings of the 7th SXNS - Lake Tahoe, CA, United States
Duration: 23 Sep 200227 Sep 2002


  • Quantum dots
  • X-ray scattering


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