Wide-bandwidth InGaP-GaAs HBT voltage-controlled oscillators in K- and Ku-band

Chau Ching Chiong, Hong Yeh Chang, Ming Tang Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

A series of voltage-controlled oscillator (VCO) covering 12 to 21 GHz with double-tuned configuration using commercially available 2-μm GaAs heterojunction bipolar transistor (HBT) technology is presented. Double-tuned topology improves the tuning bandwidth and linearity in voltage sensitivity. The tuning bandwidth of the VCOs ranges from 21 to 25%, with phase noise of -117 to -124 dBc/Hz at 1 MHz offset from the carrier. The overall dc power consumption of the VCO is 75 mW with a supply voltage of -3 V. To the best authors' knowledge, this work demonstrates the best FOM among all the reported VCOs at K- and Ku-band, when tuning range is taken into account.

Original languageEnglish
Title of host publication2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008
DOIs
StatePublished - 2008
Event2008 Global Symposium on Millimeter Waves, GSMM 2008 - Nanjing, China
Duration: 21 Apr 200824 Apr 2008

Publication series

Name2008 Global Symposium on Millimeter Waves, Proceeding, GSMM 2008

Conference

Conference2008 Global Symposium on Millimeter Waves, GSMM 2008
Country/TerritoryChina
CityNanjing
Period21/04/0824/04/08

Keywords

  • GaAs
  • HBT
  • Low phase noise
  • VCO
  • Wide tuning range

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