Weak emitter-size effect in InP/In 0.37Ga 0.63As 0.89Sb 0.11/In 0.53Ga 0.47As double heterojunction bipolar transistors

Che An Chang, Shu Han Chen, Sheng Yu Wang, Chao Min Chang, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study shows that the current gain of InGaAsSb base DHBTs is less sensitive to the emitter size and collector current density (JC) due to their low surface recombination. The deduced emitter periphery surface recombination current (K B,surf) of type-I InP/In 0.37Ga 0.63As 0.89Sb 0.11 HBTs is 1.57×10 -5 μA/μm at JC = 0.1 A/cm 2, which is twenty times lower than that of the conventional InP/InGaAs SHBTs. The results manifest the great potential of InGaAsSb base for aggressively scaled THz HBTs.

Original languageEnglish
Title of host publication2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
StatePublished - 2011
Event2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011 - Berlin, Germany
Duration: 22 May 201126 May 2011

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
Country/TerritoryGermany
CityBerlin
Period22/05/1126/05/11

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