Wave-Guided Lateral-Configured Ge-Ge-Si Photodetectors Obtained by Rapid Melting Growth Technique

Keyphrases

• Communication Systems 50%
• Current Enhancement 50%
• Electronic Microscopy 50%
• Electronic Signal 50%
• Fabrication Methods 50%
• Germanium 50%
• Growth Techniques 100%
• High-speed Communication 50%
• I-V Characteristics 50%
• Integrated Circuit Manufacturing 50%
• Near-infrared Spectrum 100%
• Normalized Power 50%
• Optoelectronic Integrated Circuits 100%
• Oxides 50%
• P-i-n Photodetector 100%
• Photodetector 50%
• Photoelectric Conversion Efficiency 50%
• Photonics 50%
• Photoresponsivity 50%
• Polycrystalline Structure 50%
• Power Dependence 50%
• Raman Spectroscopy 50%
• Rapid Melting Growth 100%
• Responsivity 50%
• Si Photodetectors 100%
• Si Waveguide 50%
• Si-based 50%
• Si-PIN 50%
• SiGe 100%
• Signal Transmission 50%
• Single-crystalline 50%

Engineering

• Communication System 50%
• Conversion Efficiency 50%
• Current-Voltage Characteristic 50%
• Guided Wave 100%
• Ideal Solution 50%
• Integrated Circuit 50%
• Integrated Optoelectronics 100%
• Melting Point 100%
• Photodetector 100%
• Photometer 100%
• Photonics 50%
• Photosensor 50%
• Polycrystalline 50%
• Responsivity 50%
• Waveguide 50%

Material Science

• Current-Voltage Characteristic 25%
• Electron Microscopy 25%
• Electronic Circuit 75%
• Germanium 25%
• Oxide Compound 25%
• Photosensor 100%
• Raman Spectroscopy 25%
• Waveguide 25%