Wafer-Scale Bi-Assisted Semi-Auto Dry Transfer and Fabrication of High-Performance Monolayer CVD WS2Transistor

Ming Yang Li, Ching Hao Hsu, Shin Wei Shen, Ang Sheng Chou, Yuxuan Cosmi Lin, Chih Piao Chuu, Ning Yang, Sui An Chou, Lin Yun Huang, Chao Ching Cheng, Wei Yen Woon, Szuya Liao, Chih I. Wu, Lain Jong Li, Iuliana Radu, H. S.Philip Wong, Han Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A novel wafer-scale semi-automated dry transfer process for monolayer (1L) CVD WS2 was developed utilizing the weakly coupled interface between semimetal (Bi) and two-dimensional (2D) semiconductor (WS2). Bi semimetal serves as a gently adhesive transfer template for 2D materials, introducing minimal additional defects during the transfer process. Based on 2D materials processed using this new transfer method, semimetal-contacted (Bi and Sb) monolayer CVD WS2 nFETs were further demonstrated at wafer scale. Our CVD 1L WS2 nFETs fabricated using semimetal-assisted transfer with semimetal (Bi and Sb) contacts show record high on-current of 250 A/m and 243 A/m at VDS = 1 V, and record low contact resistance of 0.63 kOm and 0.73 kOm, respectively.

Original languageEnglish
Title of host publication2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages290-291
Number of pages2
ISBN (Electronic)9781665497725
DOIs
StatePublished - 2022
Event2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States
Duration: 12 Jun 202217 Jun 2022

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2022-June
ISSN (Print)0743-1562

Conference

Conference2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/TerritoryUnited States
CityHonolulu
Period12/06/2217/06/22

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