TY - JOUR
T1 - Wafer bonding for microsystems technologies
AU - Gösele, U.
AU - Tong, Q. Y.
AU - Schumacher, A.
AU - Kräuter, G.
AU - Reiche, M.
AU - Plößl, A.
AU - Kopperschmidt, P.
AU - Lee, T. H.
AU - Kim, W. J.
N1 - Funding Information:
We acknowledge fruitful collaboration with S. Mack, K. Gutjahr, G. Kästner and many others in the area of wafer bonding. Part of the research was supported by grants from SEH Japan to Duke University and from the German Federal Ministry of Science, Education, Research and Technology under contracts BMBF-13N6758/0 and BMBF-13N6451/1. We also acknowledge support by Deutsche Forschungsgemeinschaft.
PY - 1999/4/20
Y1 - 1999/4/20
N2 - In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150°C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials.
AB - In microsystems technologies, frequently complex structures consisting of structured or plain silicon or other wafers have to be joined to one mechanically stable configuration. In many cases, wafer bonding, also termed fusion bonding, allows to achieve this objective. The present overview will introduce the different requirements surfaces have to fulfill for successful bonding especially in the case of silicon wafers. Special emphasis is put on understanding the atomistic reactions at the bonding interface. This understanding has allowed the development of a simple low temperature bonding approach which allows to reach high bonding energies at temperatures as low as 150°C. Implications for pressure sensors will be discussed as well as various thinning approaches and bonding of dissimilar materials.
UR - http://www.scopus.com/inward/record.url?scp=0344146578&partnerID=8YFLogxK
U2 - 10.1016/S0924-4247(98)00310-0
DO - 10.1016/S0924-4247(98)00310-0
M3 - 會議論文
AN - SCOPUS:0344146578
SN - 0924-4247
VL - 74
SP - 161
EP - 168
JO - Sensors and Actuators, A: Physical
JF - Sensors and Actuators, A: Physical
IS - 1
T2 - Proceedings of the 1998 E-MRS Symposium H: Materials Aspects in Microsystem Technologies
Y2 - 16 June 1998 through 19 June 1998
ER -