Very high-Speed GaN-Based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication

J. W. Shi; Che Wei Lin; Wei Chen; J. E. Bowers; J. K. Sheu; Ching Liang Lin; Yun Li Li; Juri Vinogradov; Olaf Ziemann

Very high-Speed GaN-Based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication

J. W. Shi
, Che Wei Lin
, Wei Chen
, J. E. Bowers
, J. K. Sheu
, Ching Liang Lin
, Yun Li Li
, Juri Vinogradov
, Olaf Ziemann

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We demonstrate novel cyan light-emitting-diodes (LEDs) on patterned-sapphire substrate with record-high electrical-to-optical bandwidth (0.38 GHz) among visible LEDs. 0.93Gbps error-free transmission in plastic-optical-fiber can be achieved by using such device under only 20mA bias current.

Original language	English
Title of host publication	Optical Fiber Communication Conference, OFC 2012
State	Published - 2012
Event	Optical Fiber Communication Conference, OFC 2012 - Los Angeles, CA, United States Duration: 4 Mar 2012 → 8 Mar 2012

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Optical Fiber Communication Conference, OFC 2012
Country/Territory	United States
City	Los Angeles, CA
Period	4/03/12 → 8/03/12

Cite this

@inproceedings{664fe610451b40779c760687d1eb9fd1,

title = "Very high-Speed GaN-Based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication",

abstract = "We demonstrate novel cyan light-emitting-diodes (LEDs) on patterned-sapphire substrate with record-high electrical-to-optical bandwidth (0.38 GHz) among visible LEDs. 0.93Gbps error-free transmission in plastic-optical-fiber can be achieved by using such device under only 20mA bias current.",

author = "Shi, \{J. W.\} and Lin, \{Che Wei\} and Wei Chen and Bowers, \{J. E.\} and Sheu, \{J. K.\} and Lin, \{Ching Liang\} and Li, \{Yun Li\} and Juri Vinogradov and Olaf Ziemann",

year = "2012",

language = "???core.languages.en\_GB???",

isbn = "9781557529381",

series = "Optics InfoBase Conference Papers",

booktitle = "Optical Fiber Communication Conference, OFC 2012",

note = "Optical Fiber Communication Conference, OFC 2012 ; Conference date: 04-03-2012 Through 08-03-2012",

}

Shi, JW, Lin, CW, Chen, W, Bowers, JE, Sheu, JK, Lin, CL, Li, YL, Vinogradov, J & Ziemann, O 2012, Very high-Speed GaN-Based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication. in Optical Fiber Communication Conference, OFC 2012. Optics InfoBase Conference Papers, Optical Fiber Communication Conference, OFC 2012, Los Angeles, CA, United States, 4/03/12.

Very high-Speed GaN-Based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication. / Shi, J. W.; Lin, Che Wei; Chen, Wei et al.
Optical Fiber Communication Conference, OFC 2012. 2012. (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Very high-Speed GaN-Based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication

AU - Shi, J. W.

AU - Lin, Che Wei

AU - Chen, Wei

AU - Bowers, J. E.

AU - Sheu, J. K.

AU - Lin, Ching Liang

AU - Li, Yun Li

AU - Vinogradov, Juri

AU - Ziemann, Olaf

PY - 2012

Y1 - 2012

N2 - We demonstrate novel cyan light-emitting-diodes (LEDs) on patterned-sapphire substrate with record-high electrical-to-optical bandwidth (0.38 GHz) among visible LEDs. 0.93Gbps error-free transmission in plastic-optical-fiber can be achieved by using such device under only 20mA bias current.

AB - We demonstrate novel cyan light-emitting-diodes (LEDs) on patterned-sapphire substrate with record-high electrical-to-optical bandwidth (0.38 GHz) among visible LEDs. 0.93Gbps error-free transmission in plastic-optical-fiber can be achieved by using such device under only 20mA bias current.

UR - https://www.scopus.com/pages/publications/84893486929

M3 - 會議論文篇章

AN - SCOPUS:84893486929

SN - 9781557529381

T3 - Optics InfoBase Conference Papers

BT - Optical Fiber Communication Conference, OFC 2012

T2 - Optical Fiber Communication Conference, OFC 2012

Y2 - 4 March 2012 through 8 March 2012

ER -

Very high-Speed GaN-Based cyan light emitting diode on patterned sapphire substrate for 1 Gbps plastic optical fiber communication

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