@inproceedings{41182a7a8cde431482b35ca036321ed4,
title = "Very high deposition rate of a-Si:H thin films by ECRCVD",
abstract = "For the reduction of the manufacturing cost, a high deposition rate of amorphous silicon (a-Si:H) thin film in fabrication is very important. Thus high plasma density and low process temperature deposition technique is keen to develop. Another issue of a-Si:H thin film uses plasma enhanced CVD which causes plasma damage to the film. We use electron cyclotron resonance chemical vapor deposition (ECRCVD) to deposit a-Si:H layers with varying microwave power, magnetic field, and hydrogen dilution. The major advantages of ECRCVD are high deposition rate and remote plasma zone that can avoid surface damage. A high deposition rate more than 2 nm/sec was developed by ECRCVD. Fourier transform infrared spectroscopy (FTIR) is used for measuring the microstructure factor (R*) to interpret the effects of microwave power, magnetic field, and hydrogen dilution.",
author = "Chiu, {H. F.} and Chang, {Y. S.} and Wu, {J. Y.} and Li, {Y. S.} and Chang, {J. Y.} and Lee, {C. C.} and Chen, {I. C.} and Su, {C. C.} and Li, {Tomi T.}",
year = "2011",
doi = "10.1149/1.3567730",
language = "???core.languages.en_GB???",
isbn = "9781607682356",
series = "ECS Transactions",
number = "1",
pages = "1165--1171",
booktitle = "China Semiconductor Technology International Conference 2011, CSTIC 2011",
edition = "1",
note = "10th China Semiconductor Technology International Conference 2011, CSTIC 2011 ; Conference date: 13-03-2011 Through 14-03-2011",
}