Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

Chih Wei Chen; Ling Yun Kuo; Yu Chen Lai; Yue ming Hsin

doi:10.1007/s11664-021-09080-7

Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

Chih Wei Chen, Ling Yun Kuo, Yu Chen Lai, Yue ming Hsin

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 10¹⁵ cm⁻² and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (R_ON) because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.

Original language	English
Pages (from-to)	5453-5461
Number of pages	9
Journal	Journal of Electronic Materials
Volume	50
Issue number	9
DOIs	https://doi.org/10.1007/s11664-021-09080-7
State	Published - Sep 2021

Keywords

GaN
SBD
Schottky barrier diode
current blocking layer
floating metal ring

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10.1007/s11664-021-09080-7

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title = "Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel",

abstract = "This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 1015 cm−2 and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (RON) because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.",

keywords = "GaN, SBD, Schottky barrier diode, current blocking layer, floating metal ring",

author = "Chen, {Chih Wei} and Kuo, {Ling Yun} and Lai, {Yu Chen} and Hsin, {Yue ming}",

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T1 - Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

AU - Chen, Chih Wei

AU - Kuo, Ling Yun

AU - Lai, Yu Chen

AU - Hsin, Yue ming

PY - 2021/9

Y1 - 2021/9

N2 - This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 1015 cm−2 and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (RON) because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.

AB - This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 1015 cm−2 and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (RON) because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.

KW - GaN

KW - SBD

KW - Schottky barrier diode

KW - current blocking layer

KW - floating metal ring

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DO - 10.1007/s11664-021-09080-7

M3 - 期刊論文

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EP - 5461

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

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Keywords

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