Vertical GaN Schottky Barrier Diode Using Nitrogen Ion Implantation to Form a Donut-Shaped Channel

Chih Wei Chen, Ling Yun Kuo, Yu Chen Lai, Yue ming Hsin

Research output: Contribution to journalArticlepeer-review

Abstract

This paper proposes the use of nitrogen ion implantation to form circular and donut-shaped channels in vertical GaN Schottky barrier diodes (SBDs). Nitrogen ions with a dose of 1 × 1015 cm−2 and energy of 100/150 keV were used to form a current blocking layer to separate the channel from the mesa edge, thus reducing the etching damage-induced leakage in the reverse bias. SBDs with circular and donut-shaped channels exhibited reduced leakage current, and hence, increased breakdown voltage. In addition, the SBD with a donut-shaped channel exhibited improved specific on-resistance (RON) because it had a wider current spread than did the SBD with a circular channel. Moreover, a floating metal ring (FMR) was added to the SBD with a donut-shaped channel to improve the forward- and reverse-bias characteristics.

Original languageEnglish
Pages (from-to)5453-5461
Number of pages9
JournalJournal of Electronic Materials
Volume50
Issue number9
DOIs
StatePublished - Sep 2021

Keywords

  • GaN
  • SBD
  • Schottky barrier diode
  • current blocking layer
  • floating metal ring

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