Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures

Jin Wei Shi, J. L. Yen, C. H. Jiang, K. M. Chen, T. J. Hung, Ying Jay Yang

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this letter, we demonstrate a vertical-cavity surface-emitting laser (VCSEL) with a petal-shaped light-emitting aperture, which is realized by the Zn-diffusion technique, at a wavelength of 850 nm. The demonstrated device behaves like a two-dimensional VCSEL array and each light-emitting unit can have high coherence of in-phase lasing to form a near fundamental supermode emission. The measured far-field distributions of such a device exhibit single-lobe (spot), high-power (> 7.5 mW), and narrow divergence angle (∼6°) performance under a wide range of bias current. The ratio of in-phase lasing mode to total lasing modes, which include isolated single mode, in-phase, and out-of-phase modes, has also been analyzed by the measured far-field distributions and the theoretically calculated patterns.

Original languageEnglish
Pages (from-to)481-483
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number3
DOIs
StatePublished - 1 Feb 2006

Keywords

  • Semiconductor laser
  • Vertical-cavity surface-emitting laser (VCSEL)

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