Vertical and lateral GaN rectifiers on free-standing GaN substrates

A. P. Zhang; J. W. Johnson; B. Luo; F. Ren; S. J. Pearton; S. S. Park; Y. J. Park; J. I. Chyi

doi:10.1063/1.1400771

Vertical and lateral GaN rectifiers on free-standing GaN substrates

A. P. Zhang, J. W. Johnson, B. Luo, F. Ren, S. J. Pearton, S. S. Park, Y. J. Park, J. I. Chyi

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Abstract

Edge-terminated Schottky rectifiers fabricated on quasibulk GaN substrates showed a strong dependence of reverse breakdown voltage V_B on contact dimension and on rectifier geometry (lateral versus vertical). For small diameter (75 μm) Schottky contacts, V_B measured in the vertical geometry was ∼700 V, with an on-state resistance (R_ON) of 3 mΩcm², producing a figure-of-merit V²_B/R_ON of 162.8 MW cm^-2. Measured in the lateral geometry, these same rectifiers had V_B of ∼250 V, R_ON of 1.7 mΩcm² and figure-of-merit 36.5 MW cm^-2. The forward turn-on voltage (V_F) was ∼1.8 V (defined at a current density of 100 A cm^-2), producing V_B/V_F ratios of 139-389. In very large diameter (∼5 mm) rectifiers, V_B dropped to ∼6 V, but forward currents up to 500 mA were obtained in dc measurements.

Original language	English
Pages (from-to)	1555-1557
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	10
DOIs	https://doi.org/10.1063/1.1400771
State	Published - 3 Sep 2001

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@article{a78b2a98c1a849dca8381cb29016b371,

title = "Vertical and lateral GaN rectifiers on free-standing GaN substrates",

abstract = "Edge-terminated Schottky rectifiers fabricated on quasibulk GaN substrates showed a strong dependence of reverse breakdown voltage VB on contact dimension and on rectifier geometry (lateral versus vertical). For small diameter (75 μm) Schottky contacts, VB measured in the vertical geometry was ∼700 V, with an on-state resistance (RON) of 3 mΩcm2, producing a figure-of-merit V2B/RON of 162.8 MW cm-2. Measured in the lateral geometry, these same rectifiers had VB of ∼250 V, RON of 1.7 mΩcm2 and figure-of-merit 36.5 MW cm-2. The forward turn-on voltage (VF) was ∼1.8 V (defined at a current density of 100 A cm-2), producing VB/VF ratios of 139-389. In very large diameter (∼5 mm) rectifiers, VB dropped to ∼6 V, but forward currents up to 500 mA were obtained in dc measurements.",

author = "Zhang, {A. P.} and Johnson, {J. W.} and B. Luo and F. Ren and Pearton, {S. J.} and Park, {S. S.} and Park, {Y. J.} and Chyi, {J. I.}",

year = "2001",

month = sep,

day = "3",

doi = "10.1063/1.1400771",

language = "???core.languages.en_GB???",

volume = "79",

pages = "1555--1557",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "10",

}

TY - JOUR

T1 - Vertical and lateral GaN rectifiers on free-standing GaN substrates

AU - Zhang, A. P.

AU - Johnson, J. W.

AU - Luo, B.

AU - Ren, F.

AU - Pearton, S. J.

AU - Park, S. S.

AU - Park, Y. J.

AU - Chyi, J. I.

PY - 2001/9/3

Y1 - 2001/9/3

N2 - Edge-terminated Schottky rectifiers fabricated on quasibulk GaN substrates showed a strong dependence of reverse breakdown voltage VB on contact dimension and on rectifier geometry (lateral versus vertical). For small diameter (75 μm) Schottky contacts, VB measured in the vertical geometry was ∼700 V, with an on-state resistance (RON) of 3 mΩcm2, producing a figure-of-merit V2B/RON of 162.8 MW cm-2. Measured in the lateral geometry, these same rectifiers had VB of ∼250 V, RON of 1.7 mΩcm2 and figure-of-merit 36.5 MW cm-2. The forward turn-on voltage (VF) was ∼1.8 V (defined at a current density of 100 A cm-2), producing VB/VF ratios of 139-389. In very large diameter (∼5 mm) rectifiers, VB dropped to ∼6 V, but forward currents up to 500 mA were obtained in dc measurements.

AB - Edge-terminated Schottky rectifiers fabricated on quasibulk GaN substrates showed a strong dependence of reverse breakdown voltage VB on contact dimension and on rectifier geometry (lateral versus vertical). For small diameter (75 μm) Schottky contacts, VB measured in the vertical geometry was ∼700 V, with an on-state resistance (RON) of 3 mΩcm2, producing a figure-of-merit V2B/RON of 162.8 MW cm-2. Measured in the lateral geometry, these same rectifiers had VB of ∼250 V, RON of 1.7 mΩcm2 and figure-of-merit 36.5 MW cm-2. The forward turn-on voltage (VF) was ∼1.8 V (defined at a current density of 100 A cm-2), producing VB/VF ratios of 139-389. In very large diameter (∼5 mm) rectifiers, VB dropped to ∼6 V, but forward currents up to 500 mA were obtained in dc measurements.

UR - http://www.scopus.com/inward/record.url?scp=0348238912&partnerID=8YFLogxK

U2 - 10.1063/1.1400771

DO - 10.1063/1.1400771

M3 - 期刊論文

AN - SCOPUS:0348238912

SN - 0003-6951

VL - 79

SP - 1555

EP - 1557

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Vertical and lateral GaN rectifiers on free-standing GaN substrates

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