Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Hsu Sheng Tsai, Jhe Wei Liou, Yi Chung Wang, Chia Wei Chen, Yu Lun Chueh, Ching Hung Hsiao, Hao Ouyang, Wei Yen Woon, Jenq Horng Liang

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The vertical Al2Se3/MoSe2 heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe2 was formed via Mo selenization, while Al2Se3 was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.

Original languageEnglish
Pages (from-to)10154-10157
Number of pages4
JournalRSC Advances
Issue number17
StatePublished - 2017


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