Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias

Yue Ming Hsin; Yi Nan Zhong; Zhen Wei Liu

doi:10.1109/RFIC.2017.7969038

Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias

Yue Ming Hsin, Yi Nan Zhong, Zhen Wei Liu

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Current dispersion is an issue in AlGaN/GaN HEMTs. Different methods have been reported to investigate this phenomenon. This study reports an investigation of intrinsic components from small-signal model of AlGaN/GaN HEMTs right after off-state bias in linear and saturation regions in addition to drain-lag measurement. Different variations on the intrinsic components after off-state bias in linear and saturation regions were observed after switching from off-state bias. A significant current dispersion from drain-lag measurement is related to the increase in R_ds and decrease in C_ds extracted from small-signal model. However, less changes in C_gs and C_gd were observed.

Original language	English
Title of host publication	RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium
Editors	Andre Hanke, Srenik Mehta
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	144-147
Number of pages	4
ISBN (Electronic)	9781509046263
DOIs	https://doi.org/10.1109/RFIC.2017.7969038
State	Published - 5 Jul 2017
Event	2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017 - Honolulu, United States Duration: 4 Jun 2017 → 6 Jun 2017

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)	1529-2517

Conference

Conference	2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017
Country/Territory	United States
City	Honolulu
Period	4/06/17 → 6/06/17

Keywords

HEMTs
Semiconductor device modeling

Access to Document

10.1109/RFIC.2017.7969038

同具二維電子氣(2DEG)和二維電洞氣( 2DHG)之氮化鋁鎵/氮化鎵異質接面場效電晶體
Hsin, Y.-M. (PI)
1/08/15 → 31/07/16
Project: Research

Cite this

Hsin, Y. M., Zhong, Y. N., & Liu, Z. W. (2017). Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias. In A. Hanke, & S. Mehta (Eds.), RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium (pp. 144-147). Article 7969038 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIC.2017.7969038

Hsin, Yue Ming ; Zhong, Yi Nan ; Liu, Zhen Wei. / Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias. RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium. editor / Andre Hanke ; Srenik Mehta. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 144-147 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

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title = "Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias",

abstract = "Current dispersion is an issue in AlGaN/GaN HEMTs. Different methods have been reported to investigate this phenomenon. This study reports an investigation of intrinsic components from small-signal model of AlGaN/GaN HEMTs right after off-state bias in linear and saturation regions in addition to drain-lag measurement. Different variations on the intrinsic components after off-state bias in linear and saturation regions were observed after switching from off-state bias. A significant current dispersion from drain-lag measurement is related to the increase in Rds and decrease in Cds extracted from small-signal model. However, less changes in Cgs and Cgd were observed.",

keywords = "HEMTs, Semiconductor device modeling",

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Hsin, YM, Zhong, YN & Liu, ZW 2017, Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias. in A Hanke & S Mehta (eds), RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium., 7969038, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, Institute of Electrical and Electronics Engineers Inc., pp. 144-147, 2017 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2017, Honolulu, United States, 4/06/17. https://doi.org/10.1109/RFIC.2017.7969038

Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias. / Hsin, Yue Ming; Zhong, Yi Nan; Liu, Zhen Wei.
RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium. ed. / Andre Hanke; Srenik Mehta. Institute of Electrical and Electronics Engineers Inc., 2017. p. 144-147 7969038 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Current dispersion is an issue in AlGaN/GaN HEMTs. Different methods have been reported to investigate this phenomenon. This study reports an investigation of intrinsic components from small-signal model of AlGaN/GaN HEMTs right after off-state bias in linear and saturation regions in addition to drain-lag measurement. Different variations on the intrinsic components after off-state bias in linear and saturation regions were observed after switching from off-state bias. A significant current dispersion from drain-lag measurement is related to the increase in Rds and decrease in Cds extracted from small-signal model. However, less changes in Cgs and Cgd were observed.

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Hsin YM, Zhong YN, Liu ZW. Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias. In Hanke A, Mehta S, editors, RFIC 2017 - Proceedings of the 2017 IEEE Radio Frequency Integrated Circuits Symposium. Institute of Electrical and Electronics Engineers Inc. 2017. p. 144-147. 7969038. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium). doi: 10.1109/RFIC.2017.7969038

Variation of intrinsic components from small-signal model of AlGaN/GaN HEMTs in linear and saturation regions after offstate bias

Abstract

Publication series

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Keywords

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Projects

同具二維電子氣(2DEG)和二維電洞氣( 2DHG)之氮化鋁鎵/氮化鎵異質接面場效電晶體

Cite this