V-band low-power Darlington-pair gate-pumped mixer with thin-film LC-hybrid linear combiner in 90nm CMOS

H. T. Chou, J. R. Liang, H. K. Chiou

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Presented is a V-band low-power Darlington-pair double-balanced gate-pumped mixer with a thin-film (TF) LC-hybrid linear combiner in 90nm CMOS technology. The compact TF LC-hybrid linear combiner is used to feed the differential RF and LO signals to a gate-pumped mixer. Meanwhile, it provides high port-to-port isolations of the mixer. The proposed gate-pumped mixer achieves a -0.76dB conversion gain, a -7dBm 1dB compression point, and a +8.5dBm input IP3 under a low LO power of -2dBm. The core power consumption is only 2.8mW from a 1V supply. The chip size with all testing pads and dummy blocks is only 0.52mm 2.

Original languageEnglish
Pages (from-to)1023-1024
Number of pages2
JournalElectronics Letters
Volume48
Issue number16
DOIs
StatePublished - 2 Aug 2012

Fingerprint

Dive into the research topics of 'V-band low-power Darlington-pair gate-pumped mixer with thin-film LC-hybrid linear combiner in 90nm CMOS'. Together they form a unique fingerprint.

Cite this