Utilization of low wavelength laser linking with electrochemical etching to produce nano-scale porous layer on p-type silicon wafer with high luminous flux

The effect of using high-power He-Cd laser irradiation for electrochemical etching on p-type silicon in hydrofluoric (HF) acid solution was investigated. Laser irradiation on the silicon surface combined with electrochemical etching process successfully controlled the formation of porous silicon (PS) in nano-scale structure. On the surface of the laser-irradiated silicon surface, the formation of nano porous silicon (NPS) during electrochemical etching was controlled by the laser wavelength and power. Then, the NPS was analysed along with physicochemical properties using analytical techniques. The luminous flux of the laser power was controlled with the help of the integrating sphere system. We designated this as the bandgap energy absorption (BEA) of electrothermal reaction. The fabrication of NPS with laser-irradiation/electrochemical etching technology was feasible by controlling laser power (20 mW) up to a high luminescence flux value of 223 lm. NPS was used in the piratical application of microelectronic device.