Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chuo, C. M. Lee

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Material Science