Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. P. Zhang, F. Ren, S. J. Pearton, J. I. Chyi, T. E. Nee, C. C. Chuo, C. M. Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A marked hysteresis was observed in C-T characteristics of GaN p-i-n diodes measured during heating/cooling cycles. The phenomenon is related to positive charging of deep traps located close to the p-n junction and having the concentration higher than about 1017 cm-3. Such recharging, via some not completely clear mechanisms, also effects the current-voltage characteristics increasing the reverse and the forward currents at low forward biases.

Original languageEnglish
Pages (from-to)1549-1555
Number of pages7
JournalSolid-State Electronics
Volume44
Issue number9
DOIs
StatePublished - 1 Sep 2000

Fingerprint

Dive into the research topics of 'Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors'. Together they form a unique fingerprint.

Cite this