Unstrained In0.3Ga0.7As/In0.29Al0.71As resonant tunnelling diodes grown on GaAs

H. P. Hwang; J. L. Shieh; R. M. Lin; J. I. Chyi; S. L. Tu; C. K. Peng; S. J. Yang

doi:10.1049/el:19940435

Unstrained In_0.3Ga_0.7As/In_0.29Al_0.71As resonant tunnelling diodes grown on GaAs

H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, S. J. Yang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The authors investigate the current-voltage characteristics of In_0.3Ga_0.7As/In_0.29Al_0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In_0.3Ga_0.7As and GaAs.

Original language	English
Pages (from-to)	826-828
Number of pages	3
Journal	Electronics Letters
Volume	30
Issue number	10
DOIs	https://doi.org/10.1049/el:19940435
State	Published - 12 May 1994

Keywords

Diodes
Resonant tnnelling devices

Access to Document

10.1049/el:19940435

Cite this

@article{76a001ef077f4ba1a53b1fafcd563c95,

title = "Unstrained In0.3Ga0.7As/In0.29Al0.71As resonant tunnelling diodes grown on GaAs",

abstract = "The authors investigate the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.",

keywords = "Diodes, Resonant tnnelling devices",

author = "Hwang, {H. P.} and Shieh, {J. L.} and Lin, {R. M.} and Chyi, {J. I.} and Tu, {S. L.} and Peng, {C. K.} and Yang, {S. J.}",

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TY - JOUR

T1 - Unstrained In0.3Ga0.7As/In0.29Al0.71As resonant tunnelling diodes grown on GaAs

AU - Hwang, H. P.

AU - Shieh, J. L.

AU - Lin, R. M.

AU - Chyi, J. I.

AU - Tu, S. L.

AU - Peng, C. K.

AU - Yang, S. J.

PY - 1994/5/12

Y1 - 1994/5/12

N2 - The authors investigate the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

AB - The authors investigate the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

KW - Diodes

KW - Resonant tnnelling devices

UR - http://www.scopus.com/inward/record.url?scp=0028430753&partnerID=8YFLogxK

U2 - 10.1049/el:19940435

DO - 10.1049/el:19940435

M3 - 期刊論文

AN - SCOPUS:0028430753

SN - 0013-5194

VL - 30

SP - 826

EP - 828

JO - Electronics Letters

JF - Electronics Letters

IS - 10