Unstrained In0.3Ga0.7As/In0.29Al0.71As resonant tunnelling diodes grown on GaAs

H. P. Hwang, J. L. Shieh, R. M. Lin, J. I. Chyi, S. L. Tu, C. K. Peng, S. J. Yang

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Abstract

The authors investigate the current-voltage characteristics of In0.3Ga0.7As/In0.29Al0.71As double-barrier resonant tunnelling diodes grown on GaAs substrates. These devices exhibit peak-to-valley current ratios as high as 7.6 and 19.5 at room temperature and 77 K, respectively. Two negative differential resistance regions are also observed for devices with larger well width. These results have shown that a high quality epilayer can be obtained despite the large lattice mismatch between In0.3Ga0.7As and GaAs.

Original languageEnglish
Pages (from-to)826-828
Number of pages3
JournalElectronics Letters
Volume30
Issue number10
DOIs
StatePublished - 12 May 1994

Keywords

  • Diodes
  • Resonant tnnelling devices

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