Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Hung Tai Chang, Bo Lun Wu, Shao Liang Cheng, Tu Lee, Sheng Wei Lee

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8 Scopus citations


This study fabricates the optically active uniform SiGe/Si multiple quantum well (MQW) nanorod and nanodot arrays from the Si0.4Ge0.6/Si MQWs using nanosphere lithography (NSL) combined with the reactive ion etching (RIE) process. Compared to the as-grown sample, we observe an obvious blueshift in photoluminescence (PL) spectra for the SiGe/Si MQW nanorod and nanodot arrays, which can be attributed to the transition of PL emission from the upper multiple quantum dot-like SiGe layers to the lower MQWs. A possible mechanism associated with carrier localization is also proposed for the PL enhancement. In addition, the SiGe/Si MQW nanorod arrays are shown to exhibit excellent antireflective characteristics over a wide wavelength range. These results indicate that SiGe/Si MQW nanorod arrays fabricated using NSL combined with RIE would be potentially useful as an optoelectronic material operating in the telecommunication range.

Original languageEnglish
Article number349
Pages (from-to)1-8
Number of pages8
JournalNanoscale Research Letters
Issue number1
StatePublished - 2013


  • Epitaxy
  • Nanosphere lithography
  • Quantum dots
  • Quantum wells
  • Sige


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