Ultrasensitive Thin-Film-Based AlxGa1-xN Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

Chao Hung Wang, Kun Yu Lai, Yi Chang Li, Yen Chih Chen, Chuan Pu Liu

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


AlxGa1-xN thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound AlxGa1-xN is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

Original languageEnglish
Pages (from-to)6289-6295
Number of pages7
JournalAdvanced Materials
Issue number40
StatePublished - 1 Oct 2015


  • alloying
  • changes of Schottky barrier height
  • piezotronic strain sensors
  • strain sensitivity


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