Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors

Kian Giap Gan; Jin Wei Shi; Yen Hung Chen; Chi Kuang Sun; Yi Jen Chiu; John E. Bowers

doi:10.1063/1.1482139

Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors

Kian Giap Gan, Jin Wei Shi, Yen Hung Chen, Chi Kuang Sun, Yi Jen Chiu, John E. Bowers

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

High-output-power and high-bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors. In this letter, we report high peak-output-voltage (∼20 V) and peak-output-current (∼400 mA, 50 load) together with ultrahigh-speed performances (1.5 ps, 220 GHz), observed in low-temperature-grown-GaAs (LTG-GaAs) based metal-semiconductor-metal (MSM) traveling-wave photodetectors (TWPDs) at a wavelength of 800 nm. Ultrahigh-peak-output-power and ultrahigh-electrical-bandwidth performances were achieved due to the superior MSM microwave guiding structure and a short carrier trapping time in the LTG-GaAs layer, which reduced the space-charge screening effect and increased the photoabsorption volume without sacrificing electrical bandwidth significantly. We also observed different bias-dependent nonlinear behaviors in MSM TWPDs under high and low illuminated optical power excitations, which are possibly dominated by the space-charge screening and the lifetime increasing effects, respectively.

Original language	English
Pages (from-to)	4054-4056
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	21
DOIs	https://doi.org/10.1063/1.1482139
State	Published - 27 May 2002

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title = "Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors",

abstract = "High-output-power and high-bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors. In this letter, we report high peak-output-voltage (∼20 V) and peak-output-current (∼400 mA, 50 load) together with ultrahigh-speed performances (1.5 ps, 220 GHz), observed in low-temperature-grown-GaAs (LTG-GaAs) based metal-semiconductor-metal (MSM) traveling-wave photodetectors (TWPDs) at a wavelength of 800 nm. Ultrahigh-peak-output-power and ultrahigh-electrical-bandwidth performances were achieved due to the superior MSM microwave guiding structure and a short carrier trapping time in the LTG-GaAs layer, which reduced the space-charge screening effect and increased the photoabsorption volume without sacrificing electrical bandwidth significantly. We also observed different bias-dependent nonlinear behaviors in MSM TWPDs under high and low illuminated optical power excitations, which are possibly dominated by the space-charge screening and the lifetime increasing effects, respectively.",

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AU - Gan, Kian Giap

AU - Shi, Jin Wei

AU - Chen, Yen Hung

AU - Sun, Chi Kuang

AU - Chiu, Yi Jen

AU - Bowers, John E.

PY - 2002/5/27

Y1 - 2002/5/27

N2 - High-output-power and high-bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors. In this letter, we report high peak-output-voltage (∼20 V) and peak-output-current (∼400 mA, 50 load) together with ultrahigh-speed performances (1.5 ps, 220 GHz), observed in low-temperature-grown-GaAs (LTG-GaAs) based metal-semiconductor-metal (MSM) traveling-wave photodetectors (TWPDs) at a wavelength of 800 nm. Ultrahigh-peak-output-power and ultrahigh-electrical-bandwidth performances were achieved due to the superior MSM microwave guiding structure and a short carrier trapping time in the LTG-GaAs layer, which reduced the space-charge screening effect and increased the photoabsorption volume without sacrificing electrical bandwidth significantly. We also observed different bias-dependent nonlinear behaviors in MSM TWPDs under high and low illuminated optical power excitations, which are possibly dominated by the space-charge screening and the lifetime increasing effects, respectively.

AB - High-output-power and high-bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors. In this letter, we report high peak-output-voltage (∼20 V) and peak-output-current (∼400 mA, 50 load) together with ultrahigh-speed performances (1.5 ps, 220 GHz), observed in low-temperature-grown-GaAs (LTG-GaAs) based metal-semiconductor-metal (MSM) traveling-wave photodetectors (TWPDs) at a wavelength of 800 nm. Ultrahigh-peak-output-power and ultrahigh-electrical-bandwidth performances were achieved due to the superior MSM microwave guiding structure and a short carrier trapping time in the LTG-GaAs layer, which reduced the space-charge screening effect and increased the photoabsorption volume without sacrificing electrical bandwidth significantly. We also observed different bias-dependent nonlinear behaviors in MSM TWPDs under high and low illuminated optical power excitations, which are possibly dominated by the space-charge screening and the lifetime increasing effects, respectively.

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Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors

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