Ultrahigh-power-bandwidth product and nonlinear photoconductance performances of low-temperature-grown GaAs-based metal-semiconductor-metal traveling-wave photodetectors

Jin Wei Shi, Kian Giap Gan, Yen Hung Chen, Chi Kuang Sun, Yi Jen Chiu, John E. Bowers

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

Maximum-output-power and bandwidth performances are usually two tradeoff parameters in the design of high-speed photodetectors (PDs). In this paper, we report record high-peak output voltage (∼ 30 V) together with ultrahigh-speed performance (1.8 ps, 190 GHz) observed in low-temperature-grown GaAs (LTG-GaAs)-based metal-semiconductor-metal (MSM) traveling-wave photodetectors (TWPDs) at a wavelength of 800 nm. Ultrahigh-peak output power and ultrahigh-electrical bandwidth performances were achieved due to superior MSM microwave guiding structure, short carrier trapping time, and the capability to take high bias voltage (∼ 30 V) with a LTG-GaAs layer. Under such a high bias voltage, a significant nonlinear photocurrent increase with the bias voltage was observed. The nonlinear photoconductance and ultrahigh-output power-bandwidth performances opens a new way in the application of high-performances optoelectronic mixers and photomixer devices.

Original languageEnglish
Pages (from-to)1587-1589
Number of pages3
JournalIEEE Photonics Technology Letters
Volume14
Issue number11
DOIs
StatePublished - Nov 2002

Keywords

  • Metal-semiconductor-metal (MSM)
  • Nonlinearities, photodetectors (PDs)
  • Traveling-wave devices

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