A type of ultra-high speed photodetector was presented which used low-temperature grown GaAs as the photo-absorption layer. The device structure provided microwave mode with a velocity close to the optical velocity with a wide velocity-matched bandwidth. Better bandwidth performance was recorded due to lower microwave loss, higher microwave velocity, and better impedence matching between the electrical transmission line and the external electric load.
|Number of pages||1|
|State||Published - 2001|
|Event||Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States|
Duration: 6 May 2001 → 11 May 2001
|Conference||Conference on Lasers and Electro-Optics (CLEO)|
|Period||6/05/01 → 11/05/01|