Ultrahigh bandwidth MSM traveling-wave photodetectors

J. W. Shi; K. G. Gan; Y. J. Chiu; C. K. Sun; Y. J. Yang; J. E. Bowers

Ultrahigh bandwidth MSM traveling-wave photodetectors

J. W. Shi, K. G. Gan, Y. J. Chiu, C. K. Sun, Y. J. Yang, J. E. Bowers

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

A type of ultra-high speed photodetector was presented which used low-temperature grown GaAs as the photo-absorption layer. The device structure provided microwave mode with a velocity close to the optical velocity with a wide velocity-matched bandwidth. Better bandwidth performance was recorded due to lower microwave loss, higher microwave velocity, and better impedence matching between the electrical transmission line and the external electric load.

Original language	English
Pages	348
Number of pages	1
State	Published - 2001
Event	Conference on Lasers and Electro-Optics (CLEO) - Baltimore, MD, United States Duration: 6 May 2001 → 11 May 2001

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO)
Country/Territory	United States
City	Baltimore, MD
Period	6/05/01 → 11/05/01

Cite this

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title = "Ultrahigh bandwidth MSM traveling-wave photodetectors",

abstract = "A type of ultra-high speed photodetector was presented which used low-temperature grown GaAs as the photo-absorption layer. The device structure provided microwave mode with a velocity close to the optical velocity with a wide velocity-matched bandwidth. Better bandwidth performance was recorded due to lower microwave loss, higher microwave velocity, and better impedence matching between the electrical transmission line and the external electric load.",

author = "Shi, {J. W.} and Gan, {K. G.} and Chiu, {Y. J.} and Sun, {C. K.} and Yang, {Y. J.} and Bowers, {J. E.}",

year = "2001",

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pages = "348",

note = "Conference on Lasers and Electro-Optics (CLEO) ; Conference date: 06-05-2001 Through 11-05-2001",

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TY - CONF

T1 - Ultrahigh bandwidth MSM traveling-wave photodetectors

AU - Shi, J. W.

AU - Gan, K. G.

AU - Chiu, Y. J.

AU - Sun, C. K.

AU - Yang, Y. J.

AU - Bowers, J. E.

PY - 2001

Y1 - 2001

N2 - A type of ultra-high speed photodetector was presented which used low-temperature grown GaAs as the photo-absorption layer. The device structure provided microwave mode with a velocity close to the optical velocity with a wide velocity-matched bandwidth. Better bandwidth performance was recorded due to lower microwave loss, higher microwave velocity, and better impedence matching between the electrical transmission line and the external electric load.

AB - A type of ultra-high speed photodetector was presented which used low-temperature grown GaAs as the photo-absorption layer. The device structure provided microwave mode with a velocity close to the optical velocity with a wide velocity-matched bandwidth. Better bandwidth performance was recorded due to lower microwave loss, higher microwave velocity, and better impedence matching between the electrical transmission line and the external electric load.

UR - http://www.scopus.com/inward/record.url?scp=0034806704&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0034806704

SP - 348

T2 - Conference on Lasers and Electro-Optics (CLEO)

Y2 - 6 May 2001 through 11 May 2001

ER -

Ultrahigh bandwidth MSM traveling-wave photodetectors

Abstract

Conference

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