Ultrafast directional nickel-silicide-induced crystallization of amorphous silicon under high-density current stressing

C. H. Yu, H. H. Lin, S. L. Cheng, L. J. Chen

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

An ultrafast directional crystallization process based on the combination of high-density current stressing and metal-induced crystallization (MIC) was investigated for amorphous silicon at room temperature. A strong induced-electric-field effected the directional growth of polycrystalline silicon nanowires. The MIC based growth method solved the high-temperature and long-term annealing treatment problems associated with optoelectronic devices.

Original languageEnglish
Pages (from-to)1857-1859
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number12
DOIs
StatePublished - 24 Mar 2003

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