Ultrafast carrier-carrier scattering in AlxGa1-xAs/GaAs quantum wells

K. W. Sun, T. S. Song, C. K. Sun, J. C. Wang, S. Y. Wang, C. P. Lee

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations

Abstract

Time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantum wells are presented. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 1011 cm-2.

Original languageEnglish
Pages (from-to)387-390
Number of pages4
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 19 Jul 199923 Jul 1999

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