Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base

Shu Han Chen; Sheng Yu Wang; Hsin Yuan Chen; Kuo Hung Teng; Jen Inn Chyi

doi:10.1109/ICIPRM.2008.4702931

Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In _0.37Ga _0.63As _0.89Sb _0.ll base

Shu Han Chen, Sheng Yu Wang, Hsin Yuan Chen, Kuo Hung Teng, Jen Inn Chyi

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In _0.37Ga _0.63As _0.89Sb _0.ll base reduces the conduction band offset (δEc) at the emitterlbase (EIB) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm ². Current gain of 125 and peak IT of 238 GHz have been obtained on the devices with an emitter size of l×l0 μm ², suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (D/C) junction.

Original language	English
Title of host publication	2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs	https://doi.org/10.1109/ICIPRM.2008.4702931
State	Published - 2008
Event	2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France Duration: 25 May 2008 → 29 May 2008

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
Country/Territory	France
City	Versailles
Period	25/05/08 → 29/05/08

Keywords

Component
Heterojunction bipolar transistors (HBTs)
InPflnGaAsSb
Molecular beam epitaxy (MBE)
Type-II

Access to Document

10.1109/ICIPRM.2008.4702931

Cite this

Chen, S. H., Wang, S. Y., Chen, H. Y., Teng, K. H., & Chyi, J. I. (2008). Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In _0.37Ga _0.63As _0.89Sb _0.ll base. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 Article 4702931 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2008.4702931

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title = "Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base",

abstract = "We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base reduces the conduction band offset (δEc) at the emitterlbase (EIB) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm 2. Current gain of 125 and peak IT of 238 GHz have been obtained on the devices with an emitter size of l×l0 μm 2, suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (D/C) junction.",

keywords = "Component, Heterojunction bipolar transistors (HBTs), InPflnGaAsSb, Molecular beam epitaxy (MBE), Type-II",

author = "Chen, {Shu Han} and Wang, {Sheng Yu} and Chen, {Hsin Yuan} and Teng, {Kuo Hung} and Chyi, {Jen Inn}",

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isbn = "9781424422593",

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note = "2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 ; Conference date: 25-05-2008 Through 29-05-2008",

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Chen, SH, Wang, SY, Chen, HY, Teng, KH & Chyi, JI 2008, Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In _0.37Ga _0.63As _0.89Sb _0.ll base. in 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008., 4702931, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008, Versailles, France, 25/05/08. https://doi.org/10.1109/ICIPRM.2008.4702931

Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In _0.37Ga _0.63As _0.89Sb _0.ll base. / Chen, Shu Han; Wang, Sheng Yu; Chen, Hsin Yuan et al.
2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008. 2008. 4702931 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, Shu Han

AU - Wang, Sheng Yu

AU - Chen, Hsin Yuan

AU - Teng, Kuo Hung

AU - Chyi, Jen Inn

PY - 2008

Y1 - 2008

N2 - We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base reduces the conduction band offset (δEc) at the emitterlbase (EIB) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm 2. Current gain of 125 and peak IT of 238 GHz have been obtained on the devices with an emitter size of l×l0 μm 2, suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (D/C) junction.

AB - We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base reduces the conduction band offset (δEc) at the emitterlbase (EIB) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm 2. Current gain of 125 and peak IT of 238 GHz have been obtained on the devices with an emitter size of l×l0 μm 2, suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (D/C) junction.

KW - Component

KW - Heterojunction bipolar transistors (HBTs)

KW - InPflnGaAsSb

KW - Molecular beam epitaxy (MBE)

KW - Type-II

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SN - 9781424422593

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BT - 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008

T2 - 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008

Y2 - 25 May 2008 through 29 May 2008

ER -

Chen SH, Wang SY, Chen HY, Teng KH, Chyi JI. Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In _0.37Ga _0.63As _0.89Sb _0.ll base. In 2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008. 2008. 4702931. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2008.4702931