Ultra low turn-on voltage and high-current InP DHBT with a pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base

Shu Han Chen, Sheng Yu Wang, Hsin Yuan Chen, Kuo Hung Teng, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on the dc and microwave characteristics of an InP/InGaAsSb/InGaAs double heterojunction bipolar transistor grown by solid-source molecular beam epitaxy. The pseudomorphic In 0.37Ga 0.63As 0.89Sb 0.ll base reduces the conduction band offset (δEc) at the emitterlbase (EIB) junction and the base band gap, which leads to a very low VBE turn-on voltage of 0.35 V at 1 A/cm 2. Current gain of 125 and peak IT of 238 GHz have been obtained on the devices with an emitter size of l×l0 μm 2, suggesting that high current capability is achieved due to its type-II lineup at the InGaAsSb/InGaAs base/collector (D/C) junction.

Original languageEnglish
Title of host publication2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
StatePublished - 2008
Event2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
Duration: 25 May 200829 May 2008

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
Country/TerritoryFrance
CityVersailles
Period25/05/0829/05/08

Keywords

  • Component
  • Heterojunction bipolar transistors (HBTs)
  • InPflnGaAsSb
  • Molecular beam epitaxy (MBE)
  • Type-II

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