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Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

  • Z. R. Huang
  • , S. M. Wang
  • , C. R. Liu
  • , Y. T. Chen
  • , Y. T. Tsai
  • , Z. K. Chen
  • , C. S. Pai
  • , Y. T. Tang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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