@inproceedings{902613a3d5984a26ad92f73a4d527799,
title = "Ultra-Large Memory Window of 3.8V and 75\% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2",
abstract = "In this study, we investigated the effect of interfacial alumina on TiN/HfZrO2(HZO)/TiN and found that this layer helps to increase the MW (3.8 V). This is due to the formation of an in plane tensile stress during annealing process. This stress increases the volume fraction of the o-phase in HZO, achieving a wake-free behavior with 2Pr=35uC/cm2 in the pristine state. In addition, insertation of AlOx reduces the leakage current by one order, maintains the polarization charge, reducing the risk of charge diffusion into HZO. Sufficient polarization charge also improves the polarization switching speed, and we obtain a gain of 75\% to 700\% under operating voltage less than 1.5V.",
author = "Huang, \{Z. R.\} and Wang, \{S. M.\} and Liu, \{C. R.\} and Chen, \{Y. T.\} and Tsai, \{Y. T.\} and Chen, \{Z. K.\} and Pai, \{C. S.\} and Tang, \{Y. T.\}",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 26th Silicon Nanoelectronics Workshop, SNW 2023 ; Conference date: 11-06-2023 Through 12-06-2023",
year = "2023",
doi = "10.23919/SNW57900.2023.10183942",
language = "???core.languages.en\_GB???",
series = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "47--48",
booktitle = "2023 Silicon Nanoelectronics Workshop, SNW 2023",
}