Keyphrases
Ethylene
100%
Epitaxial Si
100%
Si(111)
100%
Carbon Source
100%
High Vacuum Chemical Vapor Deposition
100%
Heteroepitaxial Structures
100%
GeH4
50%
Silane
33%
Crystallinity
16%
Low Temperature
16%
Epitaxial
16%
Partial Pressure
16%
Heterostructure
16%
Growth Temperature
16%
Temperature Range
16%
Secondary Ion Mass Spectrometry
16%
Incorporation Efficiency
16%
Ge Concentration
16%
Surface Roughening
16%
Maximum Permissible Concentration
16%
Hydrides
16%
C Source
16%
Ge Content
16%
C-C Double Bond
16%
Substitutional Carbon
16%
Low Growth
16%
B Concentration
16%
Growth Pressure
16%
Ge Incorporation
16%
C Concentration
16%
Engineering
Thin Films
100%
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Crystallinity
33%
Heterojunctions
33%
Low-Temperature
33%
Partial Pressure
33%
Growth Temperature
33%
Temperature Range
33%
Incorporation Efficiency
33%
Growth Pressure
33%
Double Bond
33%
Physics
Thin Films
100%
Vapor Deposition
100%
Ultrahigh Vacuum
100%
Ethylene
100%
Mass Spectroscopy
16%
Heterojunctions
16%
Crystallinity
16%
Chemical Engineering
Vapor Deposition
100%
Chemical Vapor Deposition
100%
Film
100%
Ethylene
100%
Material Science
Thin Films
100%
Chemical Vapor Deposition
100%
Heterojunction
33%
Secondary Ion Mass Spectrometry
33%
Hydride
33%
Surface (Surface Science)
33%
Chemistry
Ethylene
100%
Chemical Vapor Deposition
100%
Double Bond
16%
Crystallinity
16%
Partial Pressure
16%
Secondary Ion Mass Spectroscopy
16%