Ultra-high bandwidth (570 GHz) metal-semiconductor-metal traveling-wave-photodetectors

Keyphrases

• Metal-semiconductor-metal 100%
• Traveling-wave Photodetectors 100%
• Ultra-wide Bandwidth 100%
• Measurement Results 66%
• CPW-fed 66%
• Quantum Efficiency 66%
• Ultra-high Speed 66%
• Low-temperature-grown GaAs 66%
• Electrical Bandwidth 66%
• Ultra-high 33%
• Internal Quantum Efficiency 33%
• Data Transmission 33%
• Saturation Current 33%
• High-speed Performance 33%
• Sampling Methods 33%
• Optical Pumping 33%
• Ni-P 33%
• High Output 33%
• Electron Beam Lithography 33%
• Novel Types 33%
• Electrical Pulse 33%
• MSM Photodetector 33%
• Propagation Effects 33%
• Sampling Measurement 33%
• High-Speed Data 33%
• Output Saturation 33%
• THz Frequency 33%
• Microwave Devices 33%
• Sub-picosecond 33%
• High Optical Power 33%
• Self-aligned Process 33%
• Narrow Spacing 33%
• Microwave Behavior 33%
• Data Linking 33%
• Microwave Propagation 33%

Engineering

• Photodetector 100%
• Photometer 100%
• Traveling Wave 100%
• Gallium Arsenide 66%
• Quantum Efficiency 66%
• Low-Temperature 66%
• Electrical Bandwidth 66%
• Optical Power 33%
• Internal Quantum Efficiency 33%
• Sampling Technique 33%
• Bandwidth Performance 33%
• Speed Data 33%
• Beam Lithography 33%
• Microwave Devices 33%

Physics

• Photometer 100%
• Traveling Wave 100%
• Optical Power 33%
• Optical Pumping 33%