Ultra-high bandwidth (570 GHz) metal-semiconductor-metal traveling-wave-photodetectors

Jin Wei Shi, Kian Giap Gan, Yi Jen Chiu, Yen Hung Chen, Chi Kuang Sun, Ying Jay Yang, John E. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


We demonstrate a novel type of ultra-high speed traveling wave photodetector: "metal-semiconductor-metal traveling wave photodetector" (MSM TWPD), and characterized it's ultrahigh electrical bandwidth by E-O sampling technique. The device was fabricated using low-temperature grown GaAs (LTG-GaAs). In order to achieve high internal quantum efficiency, the narrow spacing between electrodes was fabricated by self-aligned process without e-beam lithography. E-O sampling measurement results at different optical pumping level are reported. Ultra-high bandwidth (0.8 ps, 570 GHz transform bandwidth) performance was observed even under high optical power illumination (∼2.2 mW) with 8.1% net quantum efficiency. Compared with LTG-GaAs based p-i-n TWPD and vertically illuminated MSM photodetector (PD), this novel TWPD has higher output saturation current with near THz electrical bandwidth, better quantum efficiency, and can be easily fabricated and integrated with other microwave devices. By utilizing the ultra-high speed performance of this device, we also studied the microwave propagation effect of its generated subpicosecond electrical pulse on integrated CPW line. The measurement results also reveals some microwave behavior of CPW line in near THz frequency regime, which are quit important due to high speed data linking or transmission.

Original languageEnglish
Title of host publicationAsia-Pacific Microwave Conference Proceedings, APMC
Number of pages4
StatePublished - 2001
Event2001 Asia-Pacific Microwave Conference - Taipei, Taiwan
Duration: 3 Dec 20016 Dec 2001

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


Conference2001 Asia-Pacific Microwave Conference


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