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A 1.5 μm AlN epilayer with a root-mean-square surface roughness of 0.25 nm was grown by metal-organic chemical vapor deposition at the single substrate temperature below 1200 °C. The ultra-flat surface is achieved with 30 min annealing performed in the initial growth, during which abrupt AlN hillocks are removed by pulsed H 2 etching controlled via the on/off duration of NH 3 supply. The pulsed etching technique effectively tailors the island-like morphology of the AlN buffer, facilitating the lateral crystal nucleation in subsequent growth. This study provides a simple, feasible and cost-effective manufacturing method for high-quality AlN.
|Journal||Applied Physics Express|
|State||Published - 1 Jan 2019|
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- 1 Finished
Growth of High Power Uvc-Led via Optimized Admittance Diagram
1/08/17 → 31/07/18