Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

C. S. Yang, C. C. Cheng, M. C. Kuo, P. Y. Tseng, J. L. Shen, J. Lee, W. C. Chou, S. Jeng, C. Y. Lai, T. M. Hsu, J. I. Chyi

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Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.

Original languageEnglish
Pages (from-to)243-247
Number of pages5
JournalThin Solid Films
Issue number1-2
StatePublished - 1 May 2003


  • Band structure
  • Molecular beam epitaxy
  • Photon emission
  • Transmission electron microscopy


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