Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

C. S. Yang; C. C. Cheng; M. C. Kuo; P. Y. Tseng; J. L. Shen; J. Lee; W. C. Chou; S. Jeng; C. Y. Lai; T. M. Hsu; J. I. Chyi

doi:10.1016/S0040-6090(02)01112-4

Type-II Zn_1-xMn_xSe/ZnSe_1-yTe_y quantum wells

C. S. Yang, C. C. Cheng, M. C. Kuo, P. Y. Tseng, J. L. Shen, J. Lee, W. C. Chou, S. Jeng, C. Y. Lai, T. M. Hsu, J. I. Chyi

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Zn_1-xMn_xSe/ZnSe_1-yTe_y (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn_1-xMn_xSe layers. Holes were localized in the ZnSe_1-yTe_y layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.

Original language	English
Pages (from-to)	243-247
Number of pages	5
Journal	Thin Solid Films
Volume	429
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01112-4
State	Published - 1 May 2003

Keywords

Band structure
Molecular beam epitaxy
Photon emission
Transmission electron microscopy

Access to Document

10.1016/S0040-6090(02)01112-4

Cite this

@article{6387fe1b823e4c7097525cb4b421bbcb,

title = "Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells",

abstract = "Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.",

keywords = "Band structure, Molecular beam epitaxy, Photon emission, Transmission electron microscopy",

author = "Yang, {C. S.} and Cheng, {C. C.} and Kuo, {M. C.} and Tseng, {P. Y.} and Shen, {J. L.} and J. Lee and Chou, {W. C.} and S. Jeng and Lai, {C. Y.} and Hsu, {T. M.} and Chyi, {J. I.}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan for financially supporting this research under Contract No. NSC-91-2112-M-033-003.",

year = "2003",

month = may,

day = "1",

doi = "10.1016/S0040-6090(02)01112-4",

language = "???core.languages.en_GB???",

volume = "429",

pages = "243--247",

journal = "Thin Solid Films",

issn = "0040-6090",

number = "1-2",

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TY - JOUR

T1 - Type-II Zn1-xMnxSe/ZnSe1-yTey quantum wells

AU - Yang, C. S.

AU - Cheng, C. C.

AU - Kuo, M. C.

AU - Tseng, P. Y.

AU - Shen, J. L.

AU - Lee, J.

AU - Chou, W. C.

AU - Jeng, S.

AU - Lai, C. Y.

AU - Hsu, T. M.

AU - Chyi, J. I.

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan for financially supporting this research under Contract No. NSC-91-2112-M-033-003.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.

AB - Zn1-xMnxSe/ZnSe1-yTey (x = 0.03, y = 0.08) multiple-quantum-well structures were grown on GaAs substrates by molecular-beam epitaxy. Strong photoluminescence associated with iso-electronic Te traps was observed. A type-II band alignment was proposed for this class of quantum-well structures. Electrons were confined in the Zn1-xMnxSe layers. Holes were localized in the ZnSe1-yTey layers. The respective valence and conduction band offset were determined as 350 ± 50 and 205 ± 50 meV.

KW - Band structure

KW - Molecular beam epitaxy

KW - Photon emission

KW - Transmission electron microscopy

UR - http://www.scopus.com/inward/record.url?scp=0038297476&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(02)01112-4

DO - 10.1016/S0040-6090(02)01112-4

M3 - 期刊論文

AN - SCOPUS:0038297476

SN - 0040-6090

VL - 429

SP - 243

EP - 247

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -