Type-II GaAs0.5Sb0.5/InP Uni-Traveling Carrier Photodiodes with Sub-Terahertz Bandwidth and High-Power Performance under Zero-Bias Operation

Jhih Min Wun, Rui Lin Chao, Yu Wen Wang, Yi Han Chen, Jin Wei Shi

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We successfully demonstrate ultrafast uni-traveling carrier photodiodes (PD) with sub-terahertz bandwidth (~170 GHz) and high-power performance under zero bias and at 1.55-μm optical wavelength operation. By using a type-II (GaAs0.5Sb0.5/InP) absorption-collector interface and inserting an n-type (1 × 1018 cm-3) charge layer in the collector, the current blocking (Kirk) effect can be greatly minimized. A stack of undoped AlxIn0.52Ga0.48-xAs layers with different Aluminum mole fractions (x: 0.2 to 0.08) and bandgaps is adopted as the collector layer. This graded-bandgap design can provide a built-in electric field and further shorten the internal collector transit time. The demonstrated PD structure achieves a 3-dB optical-to-electrical bandwidth of 170 GHz and subterahertz output power-11.3 dBm at 170 GHz, a record among all the reported zero-bias PDs.

Original languageEnglish
Pages (from-to)711-716
Number of pages6
JournalJournal of Lightwave Technology
Volume35
Issue number4
DOIs
StatePublished - 15 Feb 2017

Keywords

  • High-power photodiodes
  • photodiodes

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