Two X-band monolithic voltage controlled oscillators

Hwann Kaeo Chiou; Chi Yang Chang; Hwan Min Liu; Pao Kuei Horng; Te Hui Wang; Chung Sen Wu

doi:10.1109/EDMS.1994.863845

Two X-band monolithic voltage controlled oscillators

Hwann Kaeo Chiou, Chi Yang Chang, Hwan Min Liu, Pao Kuei Horng, Te Hui Wang, Chung Sen Wu

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth. The measured results of VCO with single diode shows the tuning bandwidth of 800 MHz centered at 9.2 GHz with the output power of 12 dBm. The second VCO with dual tuning diodes shows the tuning bandwidth of 2 GHz centered at 9.4 GHz The VCOs are fabricated with Hughes 0.5 micron ion implant MESFET foundry process[l].

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.863845
State	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 12 Jul 1994 → 15 Jul 1994

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	12/07/94 → 15/07/94

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10.1109/EDMS.1994.863845

Cite this

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title = "Two X-band monolithic voltage controlled oscillators",

abstract = "In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth. The measured results of VCO with single diode shows the tuning bandwidth of 800 MHz centered at 9.2 GHz with the output power of 12 dBm. The second VCO with dual tuning diodes shows the tuning bandwidth of 2 GHz centered at 9.4 GHz The VCOs are fabricated with Hughes 0.5 micron ion implant MESFET foundry process[l].",

author = "Chiou, {Hwann Kaeo} and Chang, {Chi Yang} and Liu, {Hwan Min} and Horng, {Pao Kuei} and Wang, {Te Hui} and Wu, {Chung Sen}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

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T1 - Two X-band monolithic voltage controlled oscillators

AU - Chiou, Hwann Kaeo

AU - Chang, Chi Yang

AU - Liu, Hwan Min

AU - Horng, Pao Kuei

AU - Wang, Te Hui

AU - Wu, Chung Sen

PY - 1994

Y1 - 1994

N2 - In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth. The measured results of VCO with single diode shows the tuning bandwidth of 800 MHz centered at 9.2 GHz with the output power of 12 dBm. The second VCO with dual tuning diodes shows the tuning bandwidth of 2 GHz centered at 9.4 GHz The VCOs are fabricated with Hughes 0.5 micron ion implant MESFET foundry process[l].

AB - In this paper, two types of MMIC voltage controlled oscillators have been successfully demonstrated. The first chip with single tuning diode shows the excellent tuning linearity. The second chip with two tuning diodes can improve the tuning bandwidth. The measured results of VCO with single diode shows the tuning bandwidth of 800 MHz centered at 9.2 GHz with the output power of 12 dBm. The second VCO with dual tuning diodes shows the tuning bandwidth of 2 GHz centered at 9.4 GHz The VCOs are fabricated with Hughes 0.5 micron ion implant MESFET foundry process[l].

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DO - 10.1109/EDMS.1994.863845

M3 - 會議論文

AN - SCOPUS:85063579163

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Two X-band monolithic voltage controlled oscillators

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