Two-dimensional mixed-level device and circuit simulation using HSPICE

Yao Tsung Tsai, Chin Lin Teng

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents an equivalent circuit approach to 2D numerical mixed-level device and circuit simulation using HSPICE. In this paper, Poisson's and continuity equations are formulated into a subcircuit format suitable for general circuit simulators such as HSPICE. In other words, the device is converted to an equivalent circuit model, which changes the device simulation problem into a circuit analysis problem and allows simultaneous solution of an electrical network containing both nonlinear circuit elements and numerical models of devices. Different from conventional approaches, our approach is conceptually simple, and the extension of this model to three-dimensional device simulation is straightforward. The utility of this approach in mixed-level simulation is demonstrated through transient analysis of diode switching circuit, SOS (semiconductor-oxide-semiconductor) test circuit and submicron MOSFET simulation using HSPICE.

Original languageEnglish
Pages (from-to)290-296
Number of pages7
JournalProceedings of the National Science Council, Republic of China, Part A: Physical Science and Engineering
Volume22
Issue number2
StatePublished - Mar 1998

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