Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

Shu Cheng Chin, Yuan Chih Chang, Chen Chih Hsu, Wei Hsiang Lin, Chih I. Wu, Chia Seng Chang, Tien T. Tsong, Wei Yen Woon, Li Te Lin, Hun Jan Tao

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors.

Original languageEnglish
Article number325703
JournalNanotechnology
Volume19
Issue number32
DOIs
StatePublished - 13 Aug 2008

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