Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures

Shih Wei Feng, Yung Chen Cheng, Chi Chih Liao, Yi Yin Chung, Chih Wen Liu, Chih Chung Yang, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - Nov 2001


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