Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures

Shih Wei Feng; Yung Chen Cheng; Chi Chih Liao; Yi Yin Chung; Chih Wen Liu; Chih Chung Yang; Yen Sheng Lin; Kung Jeng Ma; Jen Inn Chyi

doi:10.1002/1521-3951(200111)228:1<121::AID-PSSB121>3.0.CO;2-I

Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures

Shih Wei Feng, Yung Chen Cheng, Chi Chih Liao, Yi Yin Chung, Chih Wen Liu, Chih Chung Yang, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

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Abstract

Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.

Original language	English
Pages (from-to)	121-124
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	228
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200111)228:1<121::AID-PSSB121>3.0.CO;2-I
State	Published - Nov 2001

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title = "Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures",

abstract = "Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.",

author = "Feng, {Shih Wei} and Cheng, {Yung Chen} and Liao, {Chi Chih} and Chung, {Yi Yin} and Liu, {Chih Wen} and Yang, {Chih Chung} and Lin, {Yen Sheng} and Ma, {Kung Jeng} and Chyi, {Jen Inn}",

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T1 - Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures

AU - Feng, Shih Wei

AU - Cheng, Yung Chen

AU - Liao, Chi Chih

AU - Chung, Yi Yin

AU - Liu, Chih Wen

AU - Yang, Chih Chung

AU - Lin, Yen Sheng

AU - Ma, Kung Jeng

AU - Chyi, Jen Inn

PY - 2001/11

Y1 - 2001/11

N2 - Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.

AB - Two-component decay of time-resolved photoluminescence (TRPL) intensity in three InGaN/GaN multiple quantum well samples were observed. The first-decay component was attributed to exciton relaxation of free-carrier and localized states; the second-decay one was dominated by the relaxation of localized excitons. The second-decay lifetime was related to the extent of carrier localization or indium aggregation and phase separation. The lifetime of free-carrier states was connected with the defect density. Based on the temperature-dependent data of PL and stimulated emission (SE), the localization energies of the three samples were calibrated to show the consistent trend with the second-decay lifetime and previous material analyses.

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U2 - 10.1002/1521-3951(200111)228:1<121::AID-PSSB121>3.0.CO;2-I

DO - 10.1002/1521-3951(200111)228:1<121::AID-PSSB121>3.0.CO;2-I

M3 - 期刊論文

AN - SCOPUS:0035541066

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

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Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures

Abstract

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