Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.
|State||Published - 2001|
|Event||4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan|
Duration: 15 Jul 2001 → 19 Jul 2001
|Conference||4th Pacific Rim Conference on Lasers and Electro-Optics|
|Period||15/07/01 → 19/07/01|