Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

Shih Wei Feng; Yung Chen Cheng; C. C. Yang; Chin Yi Tsai; Yen Sheng Lin; Chen Hsu; Kung Jeng Ma; Jen Inn Chyi

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

Shih Wei Feng, Yung Chen Cheng, C. C. Yang, Chin Yi Tsai, Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.

Original language	English
Pages	II220-II221
State	Published - 2001
Event	4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba, Japan Duration: 15 Jul 2001 → 19 Jul 2001

Conference

Conference	4th Pacific Rim Conference on Lasers and Electro-Optics
Country/Territory	Japan
City	Chiba
Period	15/07/01 → 19/07/01

Cite this

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title = "Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures",

abstract = "Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.",

author = "Feng, {Shih Wei} and Cheng, {Yung Chen} and Yang, {C. C.} and Tsai, {Chin Yi} and Lin, {Yen Sheng} and Chen Hsu and Ma, {Kung Jeng} and Chyi, {Jen Inn}",

year = "2001",

language = "???core.languages.en_GB???",

pages = "II220--II221",

note = "4th Pacific Rim Conference on Lasers and Electro-Optics ; Conference date: 15-07-2001 Through 19-07-2001",

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TY - CONF

T1 - Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

AU - Feng, Shih Wei

AU - Cheng, Yung Chen

AU - Yang, C. C.

AU - Tsai, Chin Yi

AU - Lin, Yen Sheng

AU - Hsu, Chen

AU - Ma, Kung Jeng

AU - Chyi, Jen Inn

PY - 2001

Y1 - 2001

N2 - Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.

AB - Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures were analyzed. Localization energies of localized states of the structures were obtained by fitting the data of photoluminescence and spontaneous emission. The two-component decay times in time-resolved photoluminescence were found to be consistent with the observations of photoluminescence and amplified spontaneous emission.

UR - http://www.scopus.com/inward/record.url?scp=0035684818&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0035684818

SP - II220-II221

T2 - 4th Pacific Rim Conference on Lasers and Electro-Optics

Y2 - 15 July 2001 through 19 July 2001

ER -

Two-component photoluminescence decay and carrier localization in InGaN/GaN multiple quantum well structures

Abstract

Conference

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