TY - JOUR
T1 - Tunneling current and emission spectrum of a single-electron transistor under optical pumping
AU - Kuo, David M.T.
AU - Chang, Yia Chung
PY - 2005/8/15
Y1 - 2005/8/15
N2 - Theoretical studies of the tunneling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with two energy levels. It is found that holes in the quantum dot (QD) created by optical pumping lead to new channels for the electron tunneling from emitter to collector. As a consequence, an electron can tunnel through the QD via additional channels, characterized by the exciton, trion, and biexciton states. It is found that the tunneling current as a function of the gate voltage displays a series of sharp peaks and the spacing between these peaks can be used to determine the exciton binding energy as well as the electron-electron Coulomb repulsion energy. In addition, we show that the single-photon emission associated with the electron-hole recombination in the exciton complexes formed in the QD can be controlled both electrically and optically.
AB - Theoretical studies of the tunneling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with two energy levels. It is found that holes in the quantum dot (QD) created by optical pumping lead to new channels for the electron tunneling from emitter to collector. As a consequence, an electron can tunnel through the QD via additional channels, characterized by the exciton, trion, and biexciton states. It is found that the tunneling current as a function of the gate voltage displays a series of sharp peaks and the spacing between these peaks can be used to determine the exciton binding energy as well as the electron-electron Coulomb repulsion energy. In addition, we show that the single-photon emission associated with the electron-hole recombination in the exciton complexes formed in the QD can be controlled both electrically and optically.
UR - http://www.scopus.com/inward/record.url?scp=33644955750&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.72.085334
DO - 10.1103/PhysRevB.72.085334
M3 - 期刊論文
AN - SCOPUS:33644955750
SN - 1098-0121
VL - 72
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 8
M1 - 085334
ER -