Tunneling current and emission spectrum of a single-electron transistor under optical pumping

David M.T. Kuo, Yia Chung Chang

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Theoretical studies of the tunneling current and emission spectrum of a single electron transistor (SET) under optical pumping are presented. The calculation is performed via Keldysh Green's function method within the Anderson model with two energy levels. It is found that holes in the quantum dot (QD) created by optical pumping lead to new channels for the electron tunneling from emitter to collector. As a consequence, an electron can tunnel through the QD via additional channels, characterized by the exciton, trion, and biexciton states. It is found that the tunneling current as a function of the gate voltage displays a series of sharp peaks and the spacing between these peaks can be used to determine the exciton binding energy as well as the electron-electron Coulomb repulsion energy. In addition, we show that the single-photon emission associated with the electron-hole recombination in the exciton complexes formed in the QD can be controlled both electrically and optically.

Original languageEnglish
Article number085334
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number8
DOIs
StatePublished - 15 Aug 2005

Fingerprint

Dive into the research topics of 'Tunneling current and emission spectrum of a single-electron transistor under optical pumping'. Together they form a unique fingerprint.

Cite this