Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates

Zon, Tzu Wei Lo, Zhen Lun Li, Samatcha Vorathamrong, Chao Chia Cheng, Chun Nien Liu, Chun Te Chiang, Li Wei Hung, Ming Sen Hsu, Wei Sheng Liu, Jen Inn Chyi, Charles W. Tu

Research output: Contribution to journalArticlepeer-review

Abstract

InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.

Original languageEnglish
Article number032709
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume42
Issue number3
DOIs
StatePublished - 1 May 2024

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