Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates

Zon; Tzu Wei Lo; Zhen Lun Li; Samatcha Vorathamrong; Chao Chia Cheng; Chun Nien Liu; Chun Te Chiang; Li Wei Hung; Ming Sen Hsu; Wei Sheng Liu; Jen Inn Chyi; Charles W. Tu

doi:10.1116/6.0003501

Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates

Zon, Tzu Wei Lo, Zhen Lun Li, Samatcha Vorathamrong, Chao Chia Cheng, Chun Nien Liu, Chun Te Chiang, Li Wei Hung, Ming Sen Hsu, Wei Sheng Liu, Jen Inn Chyi, Charles W. Tu

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Abstract

InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.

Original language	English
Article number	032709
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	42
Issue number	3
DOIs	https://doi.org/10.1116/6.0003501
State	Published - 1 May 2024

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Zon, Lo, T. W., Li, Z. L., Vorathamrong, S., Cheng, C. C., Liu, C. N., Chiang, C. T., Hung, L. W., Hsu, M. S., Liu, W. S., Chyi, J. I., & Tu, C. W. (2024). Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 42(3), Article 032709. https://doi.org/10.1116/6.0003501

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title = "Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates",

abstract = "InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.",

author = "Zon and Lo, {Tzu Wei} and Li, {Zhen Lun} and Samatcha Vorathamrong and Cheng, {Chao Chia} and Liu, {Chun Nien} and Chiang, {Chun Te} and Hung, {Li Wei} and Hsu, {Ming Sen} and Liu, {Wei Sheng} and Chyi, {Jen Inn} and Tu, {Charles W.}",

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Zon, Lo, TW, Li, ZL, Vorathamrong, S, Cheng, CC, Liu, CN, Chiang, CT, Hung, LW, Hsu, MS, Liu, WS, Chyi, JI & Tu, CW 2024, 'Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 42, no. 3, 032709. https://doi.org/10.1116/6.0003501

TY - JOUR

T1 - Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates

AU - Zon,

AU - Lo, Tzu Wei

AU - Li, Zhen Lun

AU - Vorathamrong, Samatcha

AU - Cheng, Chao Chia

AU - Liu, Chun Nien

AU - Chiang, Chun Te

AU - Hung, Li Wei

AU - Hsu, Ming Sen

AU - Liu, Wei Sheng

AU - Chyi, Jen Inn

AU - Tu, Charles W.

PY - 2024/5/1

Y1 - 2024/5/1

N2 - InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.

AB - InGaAs/GaAsSb “W” quantum wells with GaAsP barriers are grown on GaAs (001) substrates by molecular beam epitaxy. We investigate the effect of the Sb composition in GaAsSb on the photoluminescence (PL) wavelength. X-ray rocking curve (XRC) measurements and simulations are performed to investigate the material composition and layer thickness. Low-temperature PL spectra are consistent with the XRC results. At the lowest Sb composition of 6%, the PL intensity is the strongest, and room-temperature PL is realized at ∼1100 nm. By increasing the Sb composition in the GaAsSb layer, low-temperature (20 K) PL emits at longer wavelength up to ∼1400 nm at 21% Sb while the PL intensity is the weakest. The XRC is also degraded. The strained bandgap simulation reveals the type-I to type-II band alignment transition as the Sb composition is ≥9%.

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U2 - 10.1116/6.0003501

DO - 10.1116/6.0003501

M3 - 期刊論文

AN - SCOPUS:85190991100

SN - 0734-2101

VL - 42

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

M1 - 032709

ER -

Tuning the emission wavelength by varying the Sb composition in InGaAs/GaAsSb “W” quantum wells grown on GaAs (001) substrates

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