Tuning from thermionic emission to ohmic tunnel contacts via doping in schottky-barrier nanotube transistors

Yung Fu Chen, Michael S. Fuhrer

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The air-exposed state cannot be explained by a change in contact work function but instead is due to doping of the nanotube.

Original languageEnglish
Pages (from-to)2158-2162
Number of pages5
JournalNano Letters
Volume6
Issue number9
DOIs
StatePublished - Sep 2006

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