Trap-profile extraction using high-voltage capacitance-voltage measurement in AlGaN/GaN heterostructure field-effect transistors with field plates

A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced.