Trap-profile extraction using high-voltage capacitance-voltage measurement in AlGaN/GaN heterostructure field-effect transistors with field plates

Wen Chia Liao, Jen Inn Chyi, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A measurement methodology involving high-voltage capacitance-voltage (C-V) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) C-V measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced.

Original languageEnglish
Article number7031942
Pages (from-to)835-839
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume62
Issue number3
DOIs
StatePublished - Mar 2015

Keywords

  • AlGaN/GaN heterostructure field-effect transistors (HFETs)
  • current collapse
  • transient capacitance-voltage (C-V) measurement

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