Transverse-junction superluminescent diodes at the 1.1μm wavelength regime

Shi Hao Guol; Jr Hung Wang; Yu Huei Wu; Wei Lin; Ying Jay Yang; Chi Kuang Sun; Jin Wei Shi

doi:10.1364/OE.16.016860

Transverse-junction superluminescent diodes at the 1.1μm wavelength regime

Shi Hao Guol, Jr Hung Wang, Yu Huei Wu, Wei Lin, Ying Jay Yang, Chi Kuang Sun, Jin Wei Shi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 μm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.

Original language	English
Pages (from-to)	16860-16866
Number of pages	7
Journal	Optics Express
Volume	16
Issue number	21
DOIs	https://doi.org/10.1364/OE.16.016860
State	Published - 13 Oct 2008

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abstract = "We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 μm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.",

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T1 - Transverse-junction superluminescent diodes at the 1.1μm wavelength regime

AU - Guol, Shi Hao

AU - Wang, Jr Hung

AU - Wu, Yu Huei

AU - Lin, Wei

AU - Yang, Ying Jay

AU - Sun, Chi Kuang

AU - Shi, Jin Wei

PY - 2008/10/13

Y1 - 2008/10/13

N2 - We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 μm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.

AB - We demonstrate, for the first time to our knowledge, GaAs-based transverse-junction (TJ) superluminescent diodes (SLDs) that operate at a wavelength of 1.1 μm. Due to lateral current injection by use of TJ, specified as transverse carrier flow spread in each quantum well horizontally instead of vertical well-by-well injection, nonuniform carrier distribution can be minimized among different multiple quantum wells (MQWs), which is a problem in vertical-junction (VJ) SLDs whose electroluminescent (EL) spectrum is governed by the center wavelength of QWs near the p side. In contrast with a VJ SLD, the EL spectrum of our device is determined by QWs that have a larger differential gain than the positions of QWs neighbored with a p side layer.

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M3 - 期刊論文

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Transverse-junction superluminescent diodes at the 1.1μm wavelength regime

Abstract

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