Transport in a gated Al0.18Ga0.82N/GaN electron system

J. R. Juang, Tsai Yu Huang, Tse Ming Chen, Ming Gu Lin, Gil Ho Kim, Y. Lee, C. T. Liang, D. R. Hang, Y. F. Chen, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

The low-temperature transport properties of front-gated Al 0.18Ga0.82N/GaN heterostructures were investigated. The carrier density showed a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface was estimated to be 240 Å.

Original languageEnglish
Pages (from-to)3181-3184
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number5
DOIs
StatePublished - 1 Sep 2003

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