Transport in a gated Al0.18Ga0.82N/GaN electron system

J. R. Juang; Tsai Yu Huang; Tse Ming Chen; Ming Gu Lin; Gil Ho Kim; Y. Lee; C. T. Liang; D. R. Hang; Y. F. Chen; Jen Inn Chyi

doi:10.1063/1.1594818

Transport in a gated Al_0.18Ga_0.82N/GaN electron system

J. R. Juang, Tsai Yu Huang, Tse Ming Chen, Ming Gu Lin, Gil Ho Kim, Y. Lee, C. T. Liang, D. R. Hang, Y. F. Chen, Jen Inn Chyi

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Abstract

The low-temperature transport properties of front-gated Al _0.18Ga_0.82N/GaN heterostructures were investigated. The carrier density showed a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface was estimated to be 240 Å.

Original language	English
Pages (from-to)	3181-3184
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	5
DOIs	https://doi.org/10.1063/1.1594818
State	Published - 1 Sep 2003

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title = "Transport in a gated Al0.18Ga0.82N/GaN electron system",

abstract = "The low-temperature transport properties of front-gated Al 0.18Ga0.82N/GaN heterostructures were investigated. The carrier density showed a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface was estimated to be 240 {\AA}.",

author = "Juang, {J. R.} and Huang, {Tsai Yu} and Chen, {Tse Ming} and Lin, {Ming Gu} and Kim, {Gil Ho} and Y. Lee and Liang, {C. T.} and Hang, {D. R.} and Chen, {Y. F.} and Chyi, {Jen Inn}",

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T1 - Transport in a gated Al0.18Ga0.82N/GaN electron system

AU - Juang, J. R.

AU - Huang, Tsai Yu

AU - Chen, Tse Ming

AU - Lin, Ming Gu

AU - Kim, Gil Ho

AU - Lee, Y.

AU - Liang, C. T.

AU - Hang, D. R.

AU - Chen, Y. F.

AU - Chyi, Jen Inn

PY - 2003/9/1

Y1 - 2003/9/1

N2 - The low-temperature transport properties of front-gated Al 0.18Ga0.82N/GaN heterostructures were investigated. The carrier density showed a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface was estimated to be 240 Å.

AB - The low-temperature transport properties of front-gated Al 0.18Ga0.82N/GaN heterostructures were investigated. The carrier density showed a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface was estimated to be 240 Å.

UR - http://www.scopus.com/inward/record.url?scp=0141745877&partnerID=8YFLogxK

U2 - 10.1063/1.1594818

DO - 10.1063/1.1594818

M3 - 期刊論文

AN - SCOPUS:0141745877

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VL - 94

SP - 3181

EP - 3184

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Transport in a gated Al0.18Ga0.82N/GaN electron system

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Transport in a gated Al_0.18Ga_0.82N/GaN electron system