Transparent p-type AlN:SnO 2 and p-AlN:SnO 2/n-SnO 2:In 2O 3 p-n junction fabrication

Y. S. Liu, C. I. Hsieh, Y. J. Wu, Y. S. Wei, P. M. Lee, C. Y. Liu

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

This study produced transparent p-type AlN-doped SnO 2 thin films by annealing sputtered sandwich SnO 2/AlN/SnO 2 thin films. Both Al 3+-Sn 4+ and N 3-O 2- substitution reactions-which are the main sources for the hole carriers-were identified by XPS analysis. The hole concentration of the p-type AlN:SnO 2 thin films was as high as 1.074 × 10 19 cm -3. Using the produced p-AlN:SnO 2 thin film, transparent p-AlN:SnO 2/n-SnO 2:In 2O 3 p-n junctions were fabricated and characterized as follows: (1) A low leakage current (2.97 × 10 -5 A at -5 V); (2) a 2.17 eV turn-on voltage; and (3) a low ideality factor (12.2).

Original languageEnglish
Article number122107
JournalApplied Physics Letters
Volume101
Issue number12
DOIs
StatePublished - 17 Sep 2012

Fingerprint

Dive into the research topics of 'Transparent p-type AlN:SnO 2 and p-AlN:SnO 2/n-SnO 2:In 2O 3 p-n junction fabrication'. Together they form a unique fingerprint.

Cite this