Transparent p-AlN:SnO₂/n-SnO₂tunnel diode

Using the diffusivity discrepancy between Al and N in the SnO₂phase, N-doped n⁺and Al-doped p⁺degenerate regions were created at the interface by annealing an AlN/SnO₂bilayer. Current-voltage (I-V) characteristics of the p⁺-AlN:SnO₂/n⁺-SnO₂junction indicate distinct tunnel diode characteristics, such as the tunneling mode, negative differential resistance, and turn-on mode. The overall transmittance of the p-AlN:SnO₂/n-SnO₂tunnel diode is higher than 80% in the visible region. In a certain wavelength region, the transmittance of the p-AlN:SnO₂/n-SnO₂tunnel diode is even higher than 90%. This shows that a transparent p-AlN:SnO₂/n-SnO₂tunnel diode has great potential for use in a broad range of invisible electronics.